AGR26125E 125 w, 2.5 ghz?2.7 ghz, n-channel e-mode, lateral mosfet introduction the AGR26125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor (ldmos) rf power transistor suit- able for ultrahigh-frequency (uhf) applications including multichannel multipoint distribution service (mmds) for broadcasting and communications. figure 1. available packages features typical pulsed p1db, 6 s pulse at 10% duty: 125 w . typical performance for mmds systems. f = 2600 mhz, i dq = 1300 ma, vds = 28 v, adjacent channel bw = 3.84 mhz, 5 mhz offset; alternate channel bw = 3.84 mhz, 10 mhz offset. typical p/a ratio of 9.8 db at 0.01% (probability) ccdf*: ? output power: 20 w ? power gain: 11.5 db. ? power added efficiency (pae): 19%. ? aclr1: ?35 dbc. ? aclr2: ?37 dbc. high-reliability, gold-metalization process. low hot carrier injection (hci) induced bias drift over 20 years. internally matched. high gain, efficiency, and linearity. integrated esd protection. device can withstand a 10:1 voltage standing wave ratio (vswr) at 28 vdc, 2600 mhz, 125 w contin- uous wave (cw) output power. large signal impedance parameters available. *the test signal utilized is 4-channel w-cdma test model 1. this test signal provides an equivalent reference (occupied bandwidth and waveform epf) for the actual performance with an mmds waveform. table 1. thermal characteristics table 2. absolute maximum ratings * * stresses in excess of the absolute maximum ratings can cause permanent damage to the device. these are absolute stress rat- ings only. functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. exposure to absolute maximum ratings for extended periods can adversely affect device reliability. table 3. esd rating * * although electrostatic discharge (esd) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to esd and electrical overstress (eos) during all handling, assembly, and test operations. agere employs a human-body model (hbm), a machine model (mm), and a charged-device model (cdm) qualification requirement in order to determine esd-susceptibility limits and protection design evaluation. esd voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by jedec's jesd22-a114b (hbm), jesd22-a115a (mm), and jesd22-c101a (cdm) standards. caution: mos devices are susceptible to damage from elec- trostatic charge. reasonable precautions in han- dling and packaging mos devices should be observed. AGR26125Eu (unflanged) AGR26125Ef (flanged) ) 5b 03 style 1 parameter sym value unit thermal resistance, junction to case: AGR26125Eu AGR26125Ef r ? jc r ? jc 0.5 0.5 c /w c /w parameter sym value unit drain-source voltage v dss 65 vdc gate-source voltage v gs ?0.5, +15 vdc total dissipation at t c = 25 c : AGR26125Eu AGR26125Ef p d p d 350 350 w w derate above 25 c: AGR26125Eu AGR26125Ef ? ? 2.0 2.0 w/c w/c operating junction tempera- ture t j 200 c storage temperature range t stg ?65, +150 c AGR26125E minimum (v) class hbm 500 1b mm 50 a cdm 1500 4 peak devices
125 w, 2.5 ghz?2.7 ghz, n-channel e-mode, lateral mosfet e52162rga electrical characteristics recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. dc characteristics table 5. rf characteristics * 3gpp w-cdma, typical p/a ratio of 8.5 db at 0.01% ccdf, f1 = 2590.0 mhz, and f2 = 2600 mhz. v dd = 28 vdc, i dq = 1300 ma, and p out = 20 w avg. t i n u x a m p y t n i m l o b m y s retemarap off characteristics drain-source breakdown voltage (v gs = 0, i d = 200 a) v (br)dss 65 ? ? vdc gate-source leakage current (v gs = 5 v, v ds =0v) i gss ? ? 4 adc zero gate voltage drain leakage current (v ds = 28 v, v gs =0v) i dss ? ? 12 adc on characteristics forward transconductance (v ds = 10 v, i d = 1 a) g fs ?9? s gate threshold voltage (v ds = 10 v, i d = 400 a) v gs(th) ? ? 4.8 vdc gate quiescent voltage (v ds = 28 v, i d = 1300 ma) v gs(q) ? 3.8 ? vdc drain-source on-voltage (v gs =10v, i d v ) a1 = ds(on) ? 0.08 ? vdc t i nuxampytn iml obmys re temarap dynamic characteristics reverse transfer capacitance (v ds = 28 v, v gs = 0, f = 1.0 mhz) (this part is internally matched on both the input and output.) c rss ? 3.0 ? pf functional tests (in agere systems supplied test fixture) g *n i ag rewop re i f i l pma ecruos-nommoc ps ? 11.5 ? db drain efficiency* ? 20 ? % third-order intermodulation distortion* (imd3 measured over 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz) im3 ? ?38 ? dbc adjacent channel power ratio* (acpr measured over bw of 3.84 mhz @ f1 ? 5 mhz and f2 + 5 mhz) acpr ? ?41 ? dbc bd?51??lr i *ssol nruter tupni power output, 1 db compression point (v dd = 28 v, f c = 2600.0 mhz, 6 s pulse at 10% duty ) p 1db ? 125 ? w output mismatch stress (v dd = 28 v, p out = 125 w (cw), i dq = 1300 ma, f c = 2600.0 mhz vswr = 10:1; [all phase angles]) no degradation in output power. 400 200 (in supplied test fixture)
125 w, 2.5 ghz?2.7 ghz, n-channel e-mode, lateral mosfet e52162rga electrical characteristics recommended operating conditions apply unless otherwise specified: t c = 30 c. table 4. dc characteristics table 5. rf characteristics * 3gpp w-cdma, typical p/a ratio of 8.5 db at 0.01% ccdf, f1 = 2590.0 mhz, and f2 = 2600 mhz. v dd = 28 vdc, i dq = 1300 ma, and p out = 20 w avg. t i n u x a m p y t n i m l o b m y s retemarap off characteristics drain-source breakdown voltage (v gs = 0, i d = 200 a) v (br)dss 65 ? ? vdc gate-source leakage current (v gs = 5 v, v ds =0v) i gss ? ? 4 adc zero gate voltage drain leakage current (v ds = 28 v, v gs =0v) i dss ? ? 12 adc on characteristics forward transconductance (v ds = 10 v, i d = 1 a) g fs ?9? s gate threshold voltage (v ds = 10 v, i d = 400 a) v gs(th) ? ? 4.8 vdc gate quiescent voltage (v ds = 28 v, i d = 1300 ma) v gs(q) ? 3.8 ? vdc drain-source on-voltage (v gs =10v, i d v ) a1 = ds(on) ? 0.08 ? vdc t i nuxampytn iml obmys re temarap dynamic characteristics reverse transfer capacitance (v ds = 28 v, v gs = 0, f = 1.0 mhz) (this part is internally matched on both the input and output.) c rss ? 3.0 ? pf functional tests (in agere systems supplied test fixture) g *n i ag rewop re i f i l pma ecruos-nommoc ps ? 11.5 ? db drain efficiency* ? 20 ? % third-order intermodulation distortion* (imd3 measured over 3.84 mhz bw @ f1 ? 10 mhz and f2 + 10 mhz) im3 ? ?38 ? dbc adjacent channel power ratio* (acpr measured over bw of 3.84 mhz @ f1 ? 5 mhz and f2 + 5 mhz) acpr ? ?41 ? dbc bd?51??lr i *ssol nruter tupni power output, 1 db compression point (v dd = 28 v, f c = 2600.0 mhz, 6 s pulse at 10% duty ) p 1db ? 125 ? w output mismatch stress (v dd = 28 v, p out = 125 w (cw), i dq = 1300 ma, f c = 2600.0 mhz vswr = 10:1; [all phase angles]) no degradation in output power.
e52162rga 125 w, 2.5 ghz?2.7 ghz, n-channel e-mode, lateral mosfet AGR26125E component layout pins: 1. drain, 2. gate, 3. source a. schematic b. component layout figure 2. AGR26125E component layout parts list: ? microstrip line: z1: 0.785 in. x 0.066 in.; z2: 0.180 in. x 0.066 in.; z3 0.315 in. x 0.176 in.; z4: 0.238 in. x 0.176 in.; z5: 0.096 in. x 0.066 in.; z6: 0.070 in. x 0.140 in.; z7: 0.216 in. x 0.050 in.; z8: 0.310 in. x 0.860 in.; z9: 0.342 in. x 1.050 in.; z10: 0.723 in. x 0.038 in.; z11: 0.723 in. x 0.038 in.; z12: 0.405 in. x 0.165 in.; z13: 0.103 in. x 0.076 in.; z14: 0.194 in. x 0.076 in.; z15: 0.465 in. x 0.114 in.; z16: 0.252 in. x 0.066 in. ? atc ? chip capacitor: c1: 6.8 pf series 100b; c5, c6a, c6b, c13a, c13b, c14a, c14b, c15: 4.7 pf series 100b; c7a, c7b: 1.2 pf series 100b; c16: 0.4 pf series 100a. ? murata ? capacitor c8a, c8b: 0.01 f case 0805. ? vitramon ? capacitor c3: 22000 pf case 1206 ? kemet ? capacitor c4, c9a, c9b, c10a, c10b: 22 f, 35v; c2, c11a, c11b, c12a, c12b: 0.1 f case 1206. ? fair-rite ? ferrite bead: fb1: 2743019447. ? 1206 chip resistor: r1: 1 k ; r2: 560 k ; r3: 4.7 . ? wb1, wb2: 10 mil thick, 0.6 in. x 0.18 in. ? taconic ? rf-35 board material, 1 oz. copper, 30 mil thickness, r = 3.5 1 2 3
125 w, 2.5 ghz?2.7 ghz, n-channel e-mode, lateral mosfet e52162rga typical performance characteristics figure 3. series equivalent input and output impedances mhz (f) z s ( complex source impedance ) z l ( complex optimum load impedance ) 7.3j ? 5.2 9.41j ? 0.81 ) 1 f ( 0052 5.3j ? 3.2 8.51j ? 7.51 ) 2 f ( 5352 2.3j ? 1.2 0.61j ? 0.21 ) 3 f ( 5952 9.2j ? 9.1 3.51j ? 0.9 ) 4 f ( 5562 7.2j ? 7.1 6.41j ? 5.7 ) 5 f ( 0072 0.1 0.1 0.1 0.2 0.2 0.3 0.3 0.4 0.4 0.5 0.5 0.6 0.6 0.7 0.7 0.8 0.8 0.9 0.9 1.0 1.0 1.2 1.2 1.4 1.4 1.6 1.6 1.8 1.8 2.0 2.0 3.0 3.0 4.0 4.0 5.0 5.0 10 10 10 20 20 20 50 50 50 0.2 0.2 0.2 0.4 0.4 0.4 0.6 0.6 0.6 0.8 0 .8 0.8 1.0 1.0 -20 -30 -40 -50 -60 -70 -80 -90 -100 -110 -120 -130 -140 -150 -160 170 -170 180 90 -90 -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.2 0.21 0.22 0.23 0.23 0.24 0.24 0.25 0.25 0.26 0.26 0.27 0.27 0.28 0.29 0.3 0.31 0.3 2 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.4 0.41 0.4 2 0 .43 0.44 0.45 0.46 0.47 0.48 0.48 0.49 0.49 0.0 0.0 a n g l e o f t r a n s m i s s i o n c o e f f i c i e n t i n d e g r e e s a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s e > w a v e l e n g t h s t o w a r d < e w a v e l e n g t h s t o w a r d l o a d < e i n d u c t c a p a c i t i v e r e a c t a n c e c o m p o n e n t ( - j x / z o ) , o r i n d u c t i v e s u s c e p t a n c e ( - j b / y o ) resistance component (r/zo), or conductance component (g/yo) f z s f5 f1 z l f1 f5 z 0 = 10 dut z s z l input match output match drain (6, 7) source (9) gate (2, 3)
e52162rga 125 w, 2.5 ghz?2.7 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) figure 4. cw broadband performance test conditions: two-tone measurement @ 10 mhz tone spacing, v dd = 28 vdc, f1 = 2590 mhz, f2 = 2600 mhz. figure 5. two-tone imd vs. power 20 25 30 35 40 45 50 55 60 2500 2550 2600 2650 2700 frequency, mhz a power (dbm), pae (%) a -25 -20 -15 -10 -5 0 5 10 15 gain (db), irl (db) z gain pae p1db irl -70 -65 -60 -55 -50 -45 -40 -35 -30 -25 0001 001 01 1 pout (w, pep) z dbc z 0 5 10 15 20 25 30 35 40 45 im7 im3 im5
125 w, 2.5 ghz?2.7 ghz, n-channel e-mode, lateral mosfet e52162rga typical performance characteristics (continued) test conditions: v dd = 28 v, i dq = 1200 ma, p out = 110 w (pep), f = 2595 mhz. figure 6. two-tone imd vs. tone spacing test conditions: two-carrier w-cdma 3gpp, peak-to-average = 8.5 db @ 0.01% ccdf, f1 = 2590 mhz, f2 = 2600 mhz; v dd = 28 v, i dq = 1200 ma. figure 7. two-carrier w-cdma performance -60 -50 -40 -30 -20 -10 0 01 01 1 1.0 0 tone spacing (mhz)z imd (dbc) z im3 im5 im7 -60 -50 -40 -30 -20 -10 0 10 15 20 25 30 35 40 p out (w) z imd, acp (dbc) z 0 5 10 15 20 25 30 pae (%), gain (db) z pae imd acp gain
e52162rga 125 w, 2.5 ghz?2.7 ghz, n-channel e-mode, lateral mosfet typical performance characteristics (continued) test conditions: four-carrier w-cdma 3gpp test model 1, peak-to-average = 9.8 db @ 0.01% ccdf, f = 2595 mhz, v dd = 28 v, i dq = 1200 ma. figure 8. four-carrier w-cdma performance -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 2 4 6 8 10 12 14 16 18 20 22 p out (w) z aclr1, aclr2 (dbc) z 0 2 4 6 8 10 12 14 16 18 20 pae (%), gain (db) z pae gain aclr1 aclr2
125 w, 2.5 ghz?2.7 ghz, n-channel e-mode, lateral mosfet e52162rga package dimensions all dimensions are in inches. tolerances are 0.005 in. unless specified. cut lead indicates drain. AGR26125Eu AGR26125Ef pins: 1. drain 2. gate 3. source pins: 1. drain 2. gate 3. source peak devices AGR26125Eu xxxx 1 2 3 1 2 3 1 3 2 peak devices AGR26125Ef xxxx 1 2 3 xxxx = 4 digit trace code
|
